C60 thin-film transistors with high fiel
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S. Kobayashi; T. Takenobu; S. Mori; A. Fujiwara; Y. Iwasa
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Article
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2003
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Institute of Physics and National Institute of Mat
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English
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We report performance of C 60 thin-film field-effect transistors and characterizations of C 60 thin-films on SiO 2 substrates fabricated by molecular beam deposition. Devices, fabricated and characterized under high vacuum without exposing to air, routinely showed current on/off ratios .10 8 and fie