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Theoretical analysis on threshold characteristics of surface-channel MOSFET's fabricated on a buried Oxide

✍ Scribed by Omura, Y.; Nakashima, S.; Izumi, K.

Book ID: 114594633
Publisher: IEEE
Year: 1983
Tongue: English
Weight: 663 KB
Volume: 30
Category: Article
ISSN: 0018-9383
DOI: 10.1109/t-ed.1983.21427

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