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Theoretical analysis of infrared stimulated current in a-Si:H

✍ Scribed by Xu Zhengyi; Gu Benyuan; Han Daxing


Publisher
Elsevier Science
Year
1987
Tongue
English
Weight
283 KB
Volume
62
Category
Article
ISSN
0038-1098

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Simulation analysis of the DC current ga
✍ Francesco G.Della Corte; Fortunato Pezzimenti πŸ“‚ Article πŸ“… 2004 πŸ› Elsevier Science 🌐 English βš– 134 KB

This paper presents the results of a simulation study focused on the evaluation of the DC characteristics of an n-p-n SiGe-based heterojunction bipolar transistor (HBT) performing an extremely thin n ΓΎ hydrogenated amorphous silicon (a-Si:H) emitter. The a-Si:H(n)/SiGe(p) structure exhibits an energ