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The use of a double photoresist technique in high frequency transistor fabrication

✍ Scribed by G.R.M. Thomas

Publisher: Elsevier Science
Year: 1968
Tongue: English
Weight: 335 KB
Volume: 11
Category: Article
ISSN: 0038-1101
DOI: 10.1016/0038-1101(68)90050-6

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The outer diameter of this wire is 0" 52 mm and the ratio of A1 to NbTi is 1"0. The current field characteristic of the wire, for instance, heat treated at 300 C for 80 hours, is presented in Figure 2. With these results, the mean current density in the wire is 30 000 A cm -2 at 50 kG. Figure 3 show