The thermal stability of laser annealed contacts based on palladium

✍ Scribed by P Macháč; V Myslı́k; J Náhlı́k

• Publisher: Elsevier Science
• Year: 2000
• Tongue: English
• Weight: 138 KB
• Volume: 54
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/s0167-9317(00)00411-1

✦ Synopsis

The thermal stability of W/ Pt / doping element / Pd and Pt / doping element / Pd ohmic contacts with Ge, Si, and Sn in the position of doping elements were investigated. Two stability tests were made, the first at 4008C and the second at 1958C. The obtained results were compared to the ageing of W(100 nm) /Au(80 nm) / Ge(40 nm) contact structures. The W/Au / Ge and Pt / Si / Pd contact metallizations had the best thermal stability at 4008C. After annealing for 28 h their contact resistivity increased only by one order of magnitude. The second ageing test proves that our contact structures were stable at 1958C. Their contact resistivity was not changed in the process of ageing after 4351 h. The morphology of annealed contacts was examined using scanning electron microscopy. The contact resistivity degradation is likely caused by doping element-GaAs interdiffusion.