The TEOS oxide deposited on phosphorus in-situ/POCl3 doped polysilicon with rapid thermal annealing in N2O

✍ Scribed by Chyuan-Haur Kao; Chao-Sung Lai; Chung-Len Lee

• Book ID: 114537419
• Publisher: IEEE
• Year: 1998
• Tongue: English
• Weight: 454 KB
• Volume: 45
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.711357