Temperature dependence of SiโGaAs energy
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G.E. Zardas; P.H. Yannakopoulos; M. Ziska; Chr. Symeonides; M. Vesely; P.C. Euth
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Article
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2006
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Elsevier Science
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English
โ 206 KB
In the present work, we study the Energy gap (E g ) of the Si-GaAs at various temperatures in the range from 250 up to 350 K, using the photoconductivity method, in order to find the relation between the E g and the temperature. We have measured the photocurrent as a function of photon energy from 1