Temperature dependence of Si–GaAs energy gap using photoconductivity spectra

✍ Scribed by G.E. Zardas; P.H. Yannakopoulos; M. Ziska; Chr. Symeonides; M. Vesely; P.C. Euthymiou

• Publisher: Elsevier Science
• Year: 2006
• Tongue: English
• Weight: 206 KB
• Volume: 37
• Category: Article
• ISSN: 0026-2692
• DOI: 10.1016/j.mejo.2005.04.056

✦ Synopsis

In the present work, we study the Energy gap (E g ) of the Si-GaAs at various temperatures in the range from 250 up to 350 K, using the photoconductivity method, in order to find the relation between the E g and the temperature. We have measured the photocurrent as a function of photon energy from 1.36 up to 1.55 eV for each temperature. From the analysis of the spectra for each temperature we have found three peaks corresponding to inter-band transitions and we plotted the energy that corresponds to the peaks as a function of temperature.