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The temperature dependence (4.2 to 293 K) of the resonance energies of excitonic transitions in II–VI compounds

✍ Scribed by K. A. Dmitrenko; S. G. Shevel; L. V. Taranenko; A. V. Marintchenko

Publisher
John Wiley and Sons
Year
1986
Tongue
English
Weight
630 KB
Volume
134
Category
Article
ISSN
0370-1972

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## Abstract The temperature dependence of the Debye‐Waller factors of vanadium and silicon in V~3~Si and that of the X‐ray Debye temperature are obtained from the integral intensities of X‐ray reflection measured at 11 temperatures ranging from 8 K to 293 K. It shown that the breaks on these curves