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The structure of dislocations in (In,Al,Ga)N wurtzite films grown epitaxially on (0001) or (1122) GaN or AlN substrates

✍ Scribed by Jones, K. A.; Batyrev, I. G.

Book ID: 120075920
Publisher: American Institute of Physics
Year: 2012
Tongue: English
Weight: 906 KB
Volume: 112
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.4767683

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