✦ LIBER ✦

Dissociation of Al[sub 2]O[sub 3](0001) substrates and the roles of silicon and oxygen in n-type GaN thin solid films grown by gas-source molecular beam epitaxy

✍ Scribed by Van Nostrand, J. E.; Solomon, J.; Saxler, A.; Xie, Q.-H.; Reynolds, D. C.; Look, D. C.

Book ID: 120051551
Publisher: American Institute of Physics
Year: 2000
Tongue: English
Weight: 454 KB
Volume: 87
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.373608

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Uniform MgB[sub 2] thin films grown on S

Uniform MgB[sub 2] thin films grown on Si(111) and Al[sub 2]O[sub 3](0001) substrates prepared by e-beam evaporation and in situ annealing methods

✍ Zhang, Yi Bing; Zhu, Hong Mei; Zhou, Shi Ping; Ding, Shi Ying; Lin, Zhi Wei; Zhu 📂 Article 📅 2006 🏛 American Institute of Physics 🌐 English ⚖ 544 KB

[IEEE International Conference on Advanc

[IEEE International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM) - Smolenice, Slovakia (16-18 Oct. 2000)] ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) - Atomic force microscopy analysis of Ga-face and N-face GaN grown on Al/sub 2/O/sub 3/ (0001) by plasma-assisted molecular beam epitaxy

✍ Kostopoulos, A.; Mikroulis, S.; Dimakis, E.; Tsagaraki, K.; Constantinidis, G.; 📂 Article 📅 2000 🏛 IEEE ⚖ 282 KB