The structure of 1.5–2.0 eV band gap amorphous silicon films prepared by chemical annealing

✍ Scribed by Wataru Futako; Toshio Kamiya; Charles M Fortmann; Isamu Shimizu

• Book ID: 117150287
• Publisher: Elsevier Science
• Year: 2000
• Tongue: English
• Weight: 105 KB
• Volume: 266-269
• Category: Article
• ISSN: 0022-3093
• DOI: 10.1016/s0022-3093(99)00756-5