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The Structure And Electrical Properties Of Dislocations In Semiconductors

✍ Scribed by Hirsch, P. B.


Book ID
121666039
Publisher
John Wiley and Sons
Year
1980
Tongue
English
Weight
846 KB
Volume
118
Category
Article
ISSN
0022-2720

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Structural and electrical properties of
✍ Seibt, M. ;Kveder, V. ;SchrΓΆter, W. ;Voß, O. πŸ“‚ Article πŸ“… 2005 πŸ› John Wiley and Sons 🌐 English βš– 363 KB

## Abstract The electrical properties of silicon materials containing dislocations are strongly affected by deep levels at or close to the dislocation core. Such deep levels are frequently thought to be due to metal impurities that are chemically bound to the dislocation core, segregated in the lon