𝔖 Bobbio Scriptorium
✦   LIBER   ✦

The strain configuration within the facet of Czochralski grown indium antimonide

✍ Scribed by D.C. Miller

Book ID
103165417
Publisher
Elsevier Science
Year
1979
Tongue
English
Weight
534 KB
Volume
46
Category
Article
ISSN
0022-0248

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

The Internal Strain Parameter of Indium
The Internal Strain Parameter of Indium Antimonide
✍ Cousins, C. S. G. ;Gerward, L. ;Olsen, J. Staun ;Sethi, S. A. ;Sheldon, B. J. πŸ“‚ Article πŸ“… 1991 πŸ› John Wiley and Sons 🌐 English βš– 335 KB
Effect of indium-doped interlayer on the
Effect of indium-doped interlayer on the strain relief in GaN films grown on Si(111)
✍ Wu, Jiejun ;Zhao, Lubing ;Zhang, Guoyi ;Liu, Xianglin ;Zhu, Qinsheng ;Wang, Zhan πŸ“‚ Article πŸ“… 2008 πŸ› John Wiley and Sons 🌐 English βš– 350 KB

## Abstract Crack‐free GaN films have been achieved by inserting an In‐doped low‐temperature (LT) AlGaN interlayer grown on silicon by metalorganic chemical vapor deposition. The relationship between lattice constants __c__ and __a__ obtained by X‐ray diffraction analysis shows that indium doping i