State of the art of high temperature pow
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Cyril Buttay; Dominique Planson; Bruno Allard; Dominique Bergogne; Pascal Bevila
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Article
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2011
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Elsevier Science
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English
โ 387 KB
High temperature power electronics has become possible with the recent availability of silicon carbide devices. This material, as other wide-bandgap semiconductors, can operate at temperatures above 500 โข C, whereas silicon is limited to 150-200 โข C. Applications such as transportation or a deep oil