𝔖 Bobbio Scriptorium
✦   LIBER   ✦

The SINFET—A Schottky injection MOS-gated power transistor

✍ Scribed by Sin, J.K.O.; Salama, C.A.T.; Hou, L.


Book ID
114595835
Publisher
IEEE
Year
1986
Tongue
English
Weight
1007 KB
Volume
33
Category
Article
ISSN
0018-9383

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A new design of metal-oxide-semiconductor field effect transistor is presented, where both the gate resistance and the source-drain resistance are greatly reduced compared to conventional designs. The device employs Schottky source/drain contacts and a T-shaped gate. Characteristics are measured of