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The selectively grown permeable junction base transistor with a gate of highly carbon doped GaAs

✍ Scribed by G. Mörsch; J. Gräber; M. Kamp; M. Hollfelder; H. Lüth


Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
616 KB
Volume
136
Category
Article
ISSN
0022-0248

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