The role of substrate temperature and in-chamber annealing in H-Si bonding configurations in sputtered a-Si:H
✍ Scribed by R. Rüther; J. Livingstone
- Publisher
- Elsevier Science
- Year
- 1993
- Tongue
- English
- Weight
- 497 KB
- Volume
- 226
- Category
- Article
- ISSN
- 0040-6090
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📜 SIMILAR VOLUMES
Ab initio SCF calculations using several basis sets have been performed on a number of structural isomers of Si2H 2 and Si2H4. and their nature of bonding has been studied on the basis of bond index, valency and localized molecular orbitals (LMOs). Excepting the transition states, the stability of t
\(\mu \mathrm{c}-\mathrm{Si}: \mathrm{H} / \mathrm{a}-\mathrm{Si}: \mathrm{H}\) multilayers have been fabricated with an rf glow-discharge method in which two coupling types of \(\mathrm{if}\) electrodes were used independently by turns without altering the composition of the reactive gases. This sp