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The relations for electron effective masses of strained InxGa1−xAs layers

✍ Scribed by Hrivnák, Ľ.

Publisher
John Wiley and Sons
Year
1991
Tongue
English
Weight
144 KB
Volume
123
Category
Article
ISSN
0031-8965

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Reversibility of the effects of hydrogen
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The e ects of post-growth hydrogen irradiation and subsequent thermal annealing on the electronic properties of (InGa)(AsN) single quantum wells (QWs) have been studied by photoluminescence spectroscopy. We ÿnd that the QW e ective band gap increases as a result of hydrogen irradiation and may reach