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The refractive index of III–V semiconductor strained-layer superlattices

✍ Scribed by J. Micallef; B. L. Weiss


Publisher
Springer
Year
1991
Tongue
English
Weight
971 KB
Volume
23
Category
Article
ISSN
0306-8919

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We present a study of changes in the layer morphology of symmetrically strained (GaIn)As/ \(\mathrm{Ga}(\mathrm{PAs})\) superlattices as a function of strain and off-orientation of substrates. The samples were deposited by metal-organic vapour-phase epitaxy (MOVPE). For samples grown on exactly orie