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The reasons for a change in the lifetime of minority carriers in germanium under the action of an anisotropic pressure

✍ Scribed by V. I. Gaman; V. F. Agafonnikov

Book ID
112415558
Publisher
Springer
Year
1967
Tongue
English
Weight
375 KB
Volume
10
Category
Article
ISSN
1573-9228

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πŸ“œ SIMILAR VOLUMES

On the Reasons Leading to an Appearance
On the Reasons Leading to an Appearance of Correlated and Anticorrelated Dependences of the Minority Carrier Lifetime on the Dislocation Density in Undoped Semi-Insulating β€œStoichiometric” GaAs Crystals
✍ Dr.; Prof. K. D. Glinchuk; Dr.; Prof. A. V. Prokhorovich πŸ“‚ Article πŸ“… 1995 πŸ› John Wiley and Sons 🌐 English βš– 227 KB πŸ‘ 2 views

It is shown that in undoped semi-insulating GaAs crystals grown under the stoichiometric conditions both correlated and anticorrelated dependences of the minority carrier lifetime T on the dislocation density Nd could be observed. The above-pointed effect is connected with a slight excess of Ga atom