New fromulae for determination of the thicknesses of gate oxide and active layer in SOl structures are presented. The extraction procedure is based on CV measurements of SOl MOSFETs or gated diodes with the parasitic capacitance of the buried oxide taken into account.
โฆ LIBER โฆ
The ratios of layer thicknesses in a multiphase oxide scale
โ Scribed by P. L. Harrison
- Publisher
- Springer-Verlag
- Year
- 1984
- Tongue
- English
- Weight
- 363 KB
- Volume
- 22
- Category
- Article
- ISSN
- 0030-770X
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