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The Rashba- and Dresselhaus-Induced Spin Accumulation in the Diluted Magnetic Semiconductor Nanowire Containing a Domain Wall

✍ Scribed by V. Fallahi, M. Ghanaatshoar, N. Tajielyato


Book ID
120728975
Publisher
Springer
Year
2012
Tongue
English
Weight
412 KB
Volume
26
Category
Article
ISSN
0896-1107

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We use the Ogg-McCombe Hamiltonian together with the Dresselhaus and Rashba spin-splitting terms to find the g factor of conduction electrons in GaAs-(Ga,Al)As semiconductor quantum wells (QWS) (either symmetric or asymmetric) under a magnetic field applied along the growth direction. The combined e