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Effect of the Rashba and Dresselhaus spin-splitting terms on the electron g factor in semiconductor quantum wells under applied magnetic fields

✍ Scribed by A. Bruno-Alfonso; N. Porras-Montenegro; E. Reyes-Gómez; L.E. Oliveira

Publisher: Elsevier Science
Year: 2008
Tongue: English
Weight: 147 KB
Volume: 40
Category: Article
ISSN: 1386-9477
DOI: 10.1016/j.physe.2007.09.145

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✦ Synopsis

We use the Ogg-McCombe Hamiltonian together with the Dresselhaus and Rashba spin-splitting terms to find the g factor of conduction electrons in GaAs-(Ga,Al)As semiconductor quantum wells (QWS) (either symmetric or asymmetric) under a magnetic field applied along the growth direction. The combined effects of non-parabolicity, anisotropy and spin-splitting terms are taken into account. Theoretical results are given as functions of the QW width and compared with available experimental data and previous theoretical works.

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