The Properties of Si1–xGex Nanodot Arrays Prepared by Plasma-Enhanced CVD on Porous Alumina Templates

✍ Scribed by H. Hu; D. He

• Publisher: John Wiley and Sons
• Year: 2006
• Tongue: English
• Weight: 270 KB
• Volume: 12
• Category: Article
• ISSN: 0948-1907
• DOI: 10.1002/cvde.200506528

✦ Synopsis

Si 1-x Ge x films with nanodot arrays are prepared on anodic aluminum oxide (AAO) templates by plasma-enhanced (PE)CVD. The structure and morphology of the films are investigated using X-ray diffraction (XRD) spectroscopy and transmission electron microscopy (TEM). It is found that the size of the Si 1-x Ge x grains is controlled by the pore diameter of the alumina substrate, which can be modulated during the preparation process. Intense visible photoluminescence (PL) is observed from the samples, and a remarkable red-shift of the luminescence peak position is shown with increase in the content of Ge. Conductivity measurements show that electron tunneling is enhanced with increase of the strains stored in the sample.