Preparation and optical properties of wi
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W. Gebhardt
📂
Article
📅
1992
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Elsevier Science
🌐
English
⚖ 647 KB
Large gap II-VI semiconductors have direct band gaps with gap energies ranging from 3.84 (ZnS) to 1.44 eV (CdTe) at RT. They promise optoelectronic devices operating in the visible spectral range. However, a large number of defects and difficulties in preparing n-and p-type material have hampered a