Preparation and optical properties of wide gap II–VI compounds

✍ Scribed by W. Gebhardt

• Publisher: Elsevier Science
• Year: 1992
• Tongue: English
• Weight: 647 KB
• Volume: 11
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/0921-5107(92)90180-h

✦ Synopsis

Large gap II-VI semiconductors have direct band gaps with gap energies ranging from 3.84 (ZnS) to 1.44 eV (CdTe) at RT. They promise optoelectronic devices operating in the visible spectral range. However, a large number of defects and difficulties in preparing n-and p-type material have hampered a broad application. New epitaxial growth methods such as MOVPE and MBE offer a chance to overcome many of these problems and even make a controlled doping possible. The present paper summarizes some aspects of the recent development for ZnS, ZnSe, ZnTe and a few ternary compounds.