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The Preparation and Properties of Large, Solution Grown GaP Crystals

✍ Scribed by Plaskett, T. S.; Blum, S. E.; Foster, L. M.

Book ID
126277917
Publisher
The Electrochemical Society
Year
1967
Tongue
English
Weight
969 KB
Volume
114
Category
Article
ISSN
0013-4651

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WANQ; KASANO). Heteroepitaxial layers grown on Al,O, and on Si show a variet y of structural imperfections caused by the differences in structural parameters between layer and substrate. KASANO investigated the influence of contaminations on the luminescence properties of GaP deposited on Ge. I n th