โ Scribed by P.C. Searson; X.G. Zhang
No coin nor oath required. For personal study only.
The potential distribution at the silicon/electrolyte interface was studied in HF solutions using capacitance measurements in conjunction with impedance measurements over a wide frequency range. The electrode impedance was sensitive to the reactions occurring during anodic polarization. The n silicon exhibited a characteristic response of a deep depletion layer up to potentials of several volts. For pm silicon, the impedance was related to the potential drop across the space charge layer and the Helmholtz layer. At more positive potentials, the potential drop across the Helmholtz layer became dominant.
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The current/potential behaviour of silicon in aqueous alkaline systems was investigated by potentiostatic techni ues. 9 In general, curves typical of metal passivity phenomena were obtained, although the effect o the semiconducting nature of silicon was evident. Corrosion and anodic dissolution rat
## Recent advances in the electrochemistry at the interface between two immiscible electrolyte solutions (ITIES) are reviewed. A synthetic presentation of the structure of the interface is given. Recent theories of ion transfer reactions are discussed and possible analytica applications are briefl