The physics and fabrication of in situ back-gated (311)A hole gas heterojunctions

✍ Scribed by M.Y. Simmons; A.R. Hamilton; A. Kurobe; S.J. Stevens; D.A. Ritchie; M. Pepper

• Publisher: Elsevier Science
• Year: 1997
• Tongue: English
• Weight: 494 KB
• Volume: 28
• Category: Article
• ISSN: 0026-2692
• DOI: 10.1016/s0026-2692(96)00118-8

✦ Synopsis

This paper reports the fabrication of an in situ back-gated hole gas on the (311)A suffacc of GaAs. The holc density can be varied from fullv depleted to p~=2.1 x 10 I~ cm -2 with mobilities of up to/2-1.1 x:106cm2V -! s -1. It is seen that for carrier densities down to p~=4x 10mcm -2 the mobility in the [233] direction is greater than that in the [01]] direction. Using a combination of front-and back-gates we are able to keep the carrier density constant and deform thc hole gas wavcfunction such that the holes are pushed up against or moved further away from thc heterointerfacc. Thus we are able to separately investigate the various scattering mechanisms that determine the mobility, and compare the experimental data with theoretical calculations based on the shape of the wavefunction.