The photoelectrical properties of MIS structures based on heteroepitaxialn-Hg1–xCdxTe (x= 0.21–0.23)

✍ Scribed by Voitsekhovskii, A. V.; Nesmelov, S. N.; Dzyadukh, S. M.; Vasil’ev, V. V.; Varavin, V. S.; Dvoretskii, S. A.; Mikhailov, N. N.; Sidorov, Yu. G.; Yakushev, M. V.

• Book ID: 118810118
• Publisher: Springer
• Year: 2013
• Tongue: English
• Weight: 511 KB
• Volume: 55
• Category: Article
• ISSN: 1573-9228
• DOI: 10.1007/s11182-013-9901-2