Photoelectrical characteristics of MIS structures on the basis of graded-band-gapn-HgCdTe (x= 0.21–0.23)

✍ Scribed by A. V. Voitsekhovskii; S. N. Nesmelov; S. M. Dzyadukh; V. S. Varavin; S. A. Dvoretskii; N. N. Mikhailov; Yu. G. Sidorov; V. V. Vasil’ev; T. I. Zakhar’yash; Yu. P. Mashukov

• Publisher: Springer
• Year: 2006
• Tongue: English
• Weight: 628 KB
• Volume: 49
• Category: Article
• ISSN: 1573-9228
• DOI: 10.1007/s11182-006-0232-4