Electrophysical characteristics of MIS structures based on graded band-gap MBE HgCdTe with grown in situ CdTe as a dielectric

✍ Scribed by A. V. Voitsekhovskii; S. N. Nesmelov; S. M. Dzyadukh; V. S. Varavin; S. A. Dvoretskii; N. N. Mikhailov; Yu. G. Sidorov; V. V. Vasil’ev; M. V. Yakushev

• Publisher: Springer
• Year: 2010
• Tongue: English
• Weight: 280 KB
• Volume: 53
• Category: Article
• ISSN: 1573-9228
• DOI: 10.1007/s11182-010-9399-9