The performance and reliability of 0.4 micron MOSFET's with gate oxynitrides grown by rapid thermal processing using mixtures of N2 O and O2

✍ Scribed by Okada, Y.; Tobin, P.J.; Rushbrook, P.; DeHart, W.L.

• Book ID: 114535649
• Publisher: IEEE
• Year: 1994
• Tongue: English
• Weight: 654 KB
• Volume: 41
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.277380