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The origin of the minority impurity states in heavily doped semiconductors

✍ Scribed by D. S. Domanevskii; V. V. Krasovskii; M. V. Prokopenya; V. A. Vilkotskii; S. V. Zhokhovets

Publisher: John Wiley and Sons
Year: 1986
Tongue: English
Weight: 502 KB
Volume: 133
Category: Article
ISSN: 0370-1972
DOI: 10.1002/pssb.2221330231

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In the present note, we deri\ri an esact formal expression for the self energy of the electronic Green's function for a heavily doped crystal. Several approsimations are discussed.