The influence of various dielectric para
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J.A.A. Engelbrecht; I.J. van Rooyen
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Article
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2011
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Elsevier Science
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English
⚖ 333 KB
The reststrahlen region of SiC is analysed with the goal of establishing the origin of different shapes of this band, by varying the dielectric parameters involved when simulating the reststrahlen region as obtained by infrared reflectance.