Argon ion beam voltages influence the mi
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Hong-Ying Chen; Sheng Han; Han C. Shih
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Article
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2006
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Elsevier Science
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English
β 138 KB
Aluminum nitride (AlN) films, using a dual ion beam sputtering, were prepared over the argon ion beam voltage ranging from 800 to 1200 V at room temperature. The AlN films were (0 0 2) and (1 0 0) planes. Excepting for operating at 1000 V, the AlN films exhibited the (0 0 2) preferred orientation. T