The operation of graded band gap base transistors at high currents
β Scribed by D.D. Martin; R. Stratton
- Publisher
- Elsevier Science
- Year
- 1966
- Tongue
- English
- Weight
- 455 KB
- Volume
- 9
- Category
- Article
- ISSN
- 0038-1101
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π SIMILAR VOLUMES
It is demonstrated both by numerical two-dimensional transistor simulation and by experiment that the Integral Charge-Control Relation (ICCR) is well suited for modeling high-speed bipolar transistors even at very high current densities. For this, the one-dimensional version proposed by Gumme] was m
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