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The nature of emission of porous silicon produced by chemical etching

✍ Scribed by N. E. Korsunskaya; T. R. Stara; L. Yu. Khomenkova; K. V. Svezhentsova; N. N. Melnichenko; F. F. Sizov


Book ID
111444535
Publisher
Springer
Year
2010
Tongue
English
Weight
184 KB
Volume
44
Category
Article
ISSN
1063-7826

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## Abstract Samples containing silicon nanowires (Si‐NWs) and highly porous structures (P‐Si) were prepared by electroless wet chemical etching (EWCE) of crystalline silicon wafers using various etching parameters. Photoluminescence (PL) measurements were performed with excitation at 488 nm and a p