In the present paper, a Monte Carlo calculation model of AlAs/GaAs/AlAs nanostructure is presented in order to describe the influence of different parameters such as the thickness of quantum well and barrier as well as the diffusion length. The carrier excess generated during the collision of the in
✦ LIBER ✦
The Monte-Carlo model of a light-emitting diode
✍ Scribed by Sławomir Pufal; Włodzimierz Nakwaski
- Publisher
- Springer
- Year
- 1987
- Tongue
- English
- Weight
- 212 KB
- Volume
- 19
- Category
- Article
- ISSN
- 0306-8919
No coin nor oath required. For personal study only.
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