One-and two-dimensional algorithms for the transient simulation of semiconductor devices are presented which incorporate a solenoidal total current. The paper includes results from one-dimensional simulation of a p-n junction, including forward-to-reverse bias switching and also switch-on into high
The modified semiconductor equations and associated algorithms for physical simulation
โ Scribed by Hongxi Xue; Michael J. Howes; Christopher M. Snowden
- Book ID
- 102906409
- Publisher
- John Wiley and Sons
- Year
- 1991
- Tongue
- English
- Weight
- 875 KB
- Volume
- 4
- Category
- Article
- ISSN
- 0894-3370
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โฆ Synopsis
Abstract
A set of modified semiconductor equations is described together with novel algorithms for solving them. These ensure a wellโbehaved, guaranteed convergent solution for a steadyโstate semiconductor model. Examples results on the simulation of a GaAs Dual Gate MESFET are given to demonstrate the efficiency of the new scheme.
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