The modeling of realistic chemical vapor infiltration/deposition reactors
β Scribed by John Ibrahim; Samuel Paolucci
- Publisher
- John Wiley and Sons
- Year
- 2009
- Tongue
- English
- Weight
- 595 KB
- Volume
- 64
- Category
- Article
- ISSN
- 0271-2091
- DOI
- 10.1002/fld.2155
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
## Abstract The simulation of a flame assisted chemical vapor deposition (FACVD) process is here proposed with reference to the growth of silicon thin films through the silane/chlorosilanes/hydrogen/chlorine route. The goal is to design a reactor able to deposit micromorphous or multicrystalline fi
A lab-scale nonflowing reactor was built to study chemical vapor deposition reactions. Mass spectrometry is used to follow reaction pathways and to determine instantaneous reaction rates throughout film growth. In each experiment, the kinetic rate dependence on concentration for a wide range of conc