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The mechanism of atomic layer epitaxy of GaAs using trimethylgallium and arsine

โœ Scribed by A. Watanabe; T. Kamijoh; M. Hata; T. Isu; Y. Katayama


Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
283 KB
Volume
41
Category
Article
ISSN
0042-207X

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