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Study of surface reactions in atomic layer epitaxy of GaAs using trimethylgallium by reflectance difference spectroscopy and mass spectroscopy

✍ Scribed by B.Y. Maa; P.D. Dapkus

Publisher: Elsevier Science
Year: 1993
Tongue: English
Weight: 348 KB
Volume: 225
Category: Article
ISSN: 0040-6090
DOI: 10.1016/0040-6090(93)90119-a

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