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The measurement of oscillatory pressures with discrete and sweep excitation

✍ Scribed by D.G. Mabey; B.L. Welsh

Publisher
Elsevier Science
Year
1987
Tongue
English
Weight
683 KB
Volume
1
Category
Article
ISSN
0889-9746

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We have investigated impact ionization in semiconductors under hydrostatic pressure p, by measuring the avalanche breakdown voltage V b in InAs, Si, GaAs and Ge. The sign of dV b adp was determined by the dominant phonon scattering mechanism (polar or intervalley phonons). A quantitative comparison