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High Pressure Measurements and the “Universal” Scaling of Impact Ionization with Bandstructure

✍ Scribed by J. Allam; A. R. Adams

Publisher
John Wiley and Sons
Year
1999
Tongue
English
Weight
255 KB
Volume
211
Category
Article
ISSN
0370-1972

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✦ Synopsis

We have investigated impact ionization in semiconductors under hydrostatic pressure p, by measuring the avalanche breakdown voltage V b in InAs, Si, GaAs and Ge. The sign of dV b adp was determined by the dominant phonon scattering mechanism (polar or intervalley phonons). A quantitative comparison with simple theories gave information on the location in k-space of secondary electrons. Extending the analysis to the determination of V b in wide bandgap semiconductors revealed a simple linear relation between V b and hEi, a Brillouin-zone averaged energy gap.

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