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The kinetic aspects of ordering in GaAs1-xSbx grown by organometallic vapor phase epitaxy

โœ Scribed by H.R. Jen; M.J. Jou; Y.T. Cherng; G.B. Stringfellow


Publisher
Elsevier Science
Year
1987
Tongue
English
Weight
723 KB
Volume
85
Category
Article
ISSN
0022-0248

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We report on time-integrated and time-resolved photoluminescence (PL) measurements in 80 mm thick GaN layers grown by hydride vapor phase epitaxy on sapphire substrates. The PL spectra are dominated by free exciton transitions and by three well-resolved emissions assigned to the neutral-donor-bound