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The investigation of Ge-Si layer structures by means of the etching rate method (ERM)

✍ Scribed by J. Pfeifer; É.Sz. Haraszthy

Publisher: Elsevier Science
Year: 1974
Tongue: English
Weight: 137 KB
Volume: 20
Category: Article
ISSN: 0040-6090
DOI: 10.1016/0040-6090(74)90076-5

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