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The Investigation of a Transition Layer in Epitaxial GaAs by the Low Temperature Photoluminescence Technique

✍ Scribed by Zhilyaev, Yu. V. ;Krivolapchuk, V. V. ;Rodionov, A. V. ;Rossin, V. V. ;Rossina, T. V. ;Sveshnikov, Yu. N.

No coin nor oath required. For personal study only.

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