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The interface states and series resistance effects on the forward and reverse bias I–V, C–V and G/ω-V characteristics of Al–TiW–Pd2Si/n-Si Schottky barrier diodes

✍ Scribed by H. Uslu; Ş. Altındal; U. Aydemir; İ. Dökme; İ.M. Afandiyeva

Book ID: 116606778
Publisher: Elsevier Science
Year: 2010
Tongue: English
Weight: 492 KB
Volume: 503
Category: Article
ISSN: 0925-8388
DOI: 10.1016/j.jallcom.2010.04.210

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